GaN based negative capacitance heterojunction field-effect transistors with 30 mV/dec subthreshold slope for steep switching operation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, S-W | - |
dc.contributor.author | Eom, S-K | - |
dc.contributor.author | Kang, M-J | - |
dc.contributor.author | Kim, H-S | - |
dc.contributor.author | Seo, K-S | - |
dc.contributor.author | Cha, H-Y | - |
dc.date.available | 2021-03-17T06:54:45Z | - |
dc.date.created | 2021-02-26 | - |
dc.date.issued | 2020-03 | - |
dc.identifier.issn | 2211-3797 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/11789 | - |
dc.description.abstract | We demonstrated gallium nitride (GaN) based negative capacitance field-effect transistors (NCFETs) that achieve steep switching operation. Ferroelectric phase characteristics were successfully demonstrated using a 10 nm thick undoped-HfO2 ferroelectric thin film fabricated through atomic layer deposition. The HfO2 metal-ferroelectric-metal (MFM) capacitor was connected in series with the gate electrode of a recessed normally-off AlGaN/GaN MOS-HFET. The forward/reverse sub-threshold slopes were dramatically reduced from 104/105 to 22/23 mV/dec . | - |
dc.publisher | ELSEVIER | - |
dc.title | GaN based negative capacitance heterojunction field-effect transistors with 30 mV/dec subthreshold slope for steep switching operation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, H-Y | - |
dc.identifier.doi | 10.1016/j.rinp.2020.102950 | - |
dc.identifier.scopusid | 2-s2.0-85078260584 | - |
dc.identifier.wosid | 000540004000014 | - |
dc.identifier.bibliographicCitation | RESULTS IN PHYSICS, v.16 | - |
dc.relation.isPartOf | RESULTS IN PHYSICS | - |
dc.citation.title | RESULTS IN PHYSICS | - |
dc.citation.volume | 16 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.