Influence of oxygen-plasma treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO<inf>2</inf> gate insulator
DC Field | Value | Language |
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dc.contributor.author | Cho, Geunho | - |
dc.contributor.author | G. | - |
dc.contributor.author | Cha, Hoyoung | - |
dc.contributor.author | H. | - |
dc.contributor.author | Kim, Hyungtak | - |
dc.contributor.author | H. | - |
dc.date.available | 2021-03-17T08:01:46Z | - |
dc.date.created | 2021-02-26 | - |
dc.date.issued | 2019 | - |
dc.identifier.issn | 1996-1944 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/12833 | - |
dc.description.abstract | The influence of oxygen-plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO2 gate insulator was investigated. Oxygen-plasma treatment was performed on in situ SiN, before SiO2 gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD). DC I-V characteristics were not changed by oxygen plasma treatment. However, pulsed I-V characteristics were improved, showing less dispersion compared to nontreated devices. During short-term gate bias stress, the threshold voltage shift was also smaller in a treated device than in an untreated one. X-ray photoemission spectroscopy also revealed that SiO2 on in situ SiN with oxygen-plasma treatment has an O/Si ratio close to the theoretical value. This suggests that the oxygen plasma treatment-modified surface condition of the SiN layer is favorable to SiO2 formation by PECVD. © 2019 by the authors. | - |
dc.publisher | MDPI AG | - |
dc.title | Influence of oxygen-plasma treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO<inf>2</inf> gate insulator | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, Hoyoung | - |
dc.contributor.affiliatedAuthor | Kim, Hyungtak | - |
dc.identifier.doi | 10.3390/ma122333968 | - |
dc.identifier.scopusid | 2-s2.0-85075907693 | - |
dc.identifier.bibliographicCitation | Materials, v.12, no.23 | - |
dc.relation.isPartOf | Materials | - |
dc.citation.title | Materials | - |
dc.citation.volume | 12 | - |
dc.citation.number | 23 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | Heterostructure | - |
dc.subject.keywordAuthor | In situ SiN | - |
dc.subject.keywordAuthor | Interface trap | - |
dc.subject.keywordAuthor | Oxygen plasma | - |
dc.subject.keywordAuthor | SiO2 | - |
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