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SF<inf>6</inf> plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hyun-seop | - |
| dc.contributor.author | H.-S. | - |
| dc.contributor.author | Seo | - |
| dc.contributor.author | K.-S. | - |
| dc.contributor.author | Oh | - |
| dc.contributor.author | J. | - |
| dc.contributor.author | Cha, Hoyoung | - |
| dc.contributor.author | H.-Y. | - |
| dc.date.available | 2021-03-17T08:43:24Z | - |
| dc.date.created | 2021-02-26 | - |
| dc.date.issued | 2018 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/13055 | - |
| dc.title | SF<inf>6</inf> plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Cha, Hoyoung | - |
| dc.identifier.doi | 10.1016/j.rinp.2018.06.009 | - |
| dc.identifier.scopusid | 2-s2.0-85049555813 | - |
| dc.identifier.bibliographicCitation | Results in Physics, v.10, pp.248 - 249 | - |
| dc.relation.isPartOf | Results in Physics | - |
| dc.citation.title | Results in Physics | - |
| dc.citation.volume | 10 | - |
| dc.citation.startPage | 248 | - |
| dc.citation.endPage | 249 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scopus | - |
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)