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Effects of Recessed-Gate Structureon AlGaN/GaN MIS-HEMTs Using PEALD AlOxNy Thin Film
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 차호영 | - |
| dc.date.available | 2020-07-10T02:41:57Z | - |
| dc.date.created | 2020-07-08 | - |
| dc.date.issued | 2019-07-10 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/1320 | - |
| dc.description.abstract | Effects of Recessed-Gate Structureon AlGaN/GaN MIS-HEMTs Using PEALD AlOxNy Thin Film | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | ICNS | - |
| dc.title | Effects of Recessed-Gate Structureon AlGaN/GaN MIS-HEMTs Using PEALD AlOxNy Thin Film | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | 차호영 | - |
| dc.identifier.bibliographicCitation | 학회논문집, v.0, no.0, pp.0 - 0 | - |
| dc.relation.isPartOf | 학회논문집 | - |
| dc.citation.title | 학회논문집 | - |
| dc.citation.volume | 0 | - |
| dc.citation.number | 0 | - |
| dc.citation.startPage | 0 | - |
| dc.citation.endPage | 0 | - |
| dc.type.rims | ART | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)