Extreme Ultraviolet Multilayer Defect Compensation in Computational Lithography
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sang-Kon | - |
dc.date.available | 2021-03-17T09:44:28Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/13406 | - |
dc.description.abstract | For the extreme ultraviolet (EUV) lithography, multilayer (ML) defects such as bump and pit defects can disrupt the phase of reflected field and degrade aerial images on wafer. In this paper, a defect printability and repair simulator (DPRS) is introduced to predict and repair the effect of ML defects in EUV aerial images. DPRS is composed of multilayer growth by using Gaussian function and Stearns's method, mask simulation by using a scattering matrix (S-matrix) analysis method, and projection simulation by using Kohler's illumination. For bump and pit ML defects, the combining the modified absorber and the layer-by-layer ML peeling is better than other methods. This study can be helpful in understanding EUV defect and also give insight into the EUV defect compensation for the device volume production. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Extreme Ultraviolet Multilayer Defect Compensation in Computational Lithography | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sang-Kon | - |
dc.identifier.doi | 10.1166/jnn.2016.12254 | - |
dc.identifier.scopusid | 2-s2.0-84971573781 | - |
dc.identifier.wosid | 000386123100197 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.5, pp.5415 - 5419 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 5415 | - |
dc.citation.endPage | 5419 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordAuthor | Lithography | - |
dc.subject.keywordAuthor | Lithography Simulation | - |
dc.subject.keywordAuthor | Mask Defect | - |
dc.subject.keywordAuthor | Defect Repair | - |
dc.subject.keywordAuthor | EUVL | - |
dc.subject.keywordAuthor | EUV Mask | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.