A simple dipping method to improve positive bias stress stability of In-Ga-Zn-O thin-film transistors using hydrogen peroxide

Park; S.P.; Kim; H.J.; Tak; Y.J.; Hong; S.; Kim; H.J.; Choi, Jongsun; J.S.; Kim; H.J.

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A simple dipping method to improve positive bias stress stability of In-Ga-Zn-O thin-film transistors using hydrogen peroxide

Authors: Park; S.P.; Kim; H.J.; Tak; Y.J.; Hong; S.; Kim; H.J.; Choi, Jongsun; J.S.; Kim; H.J.

Issue Date: 2016

Citation: Digest of Technical Papers - SID International Symposium, v.47, no.1, pp.1136 - 1139

Journal Title: Digest of Technical Papers - SID International Symposium

Volume: 47

Number: 1

Start Page: 1136

End Page: 1139

URI: https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/13470

DOI: 10.1002/sdtp.10823

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Appears in Collections: College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles

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