Performance Improvement of Quantum Dot-Light-Emitting Diodes Enabled by an Alloyed ZnMgO Nanoparticle Electron Transport Layer

Abstract

Since the introduction of inorganic ZnO, typically in the form of nanoparticles (NPs), as an electron transport layer (ETL) material, the device performance of electrically driven colloidal quantum dot-light-emitting diodes (QLEDs), in particular, with either Cd-based II-VI or non-Cd-based III-V (e.g., InP) quantum dot (QD) visible-emitters, has been rapidly improved. In the present work, three Zn1-xMgxO (x = 0, 0.05, 0.1) NPs that possess different electronic energy levels are applied as ETLs of solution-processed, multilayered I-III-VI type QLEDs that consist of a Cu-In-S, Cu-In-Ga-S, or Zn-Cu-In-S QD emitting layer (EML) plus a common organic hole transport layer of poly(9-vinlycarbazole). The luminance and efficiency of those QLEDs are found to be strongly dependent on the type of ZnMgO NP ETL, resulting in the substantial improvements by means of alloyed ZnMgO ETL versus pure ZnO one. Ultraviolet photoelectron and absorption spectroscopic measurements on a series of ZnMgO NP films reveal that their conduction band minimum (CBM) levels are systematically closer to the vacuum level with increasing Mg content. Therefore, such beneficial effects of alloyed NPs on QLED performance are primarily ascribed to the reduced electron injection barrier between ETL and QD EML that is enabled by the upshift of their CBM levels.