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Preparation and Characterization of Thermoelectric Thin-Film Devices Consisting of Co-Evaporated Bi2Te3 and Sb2Te3 Films
- Authors
- Kim, Jae-Hwan; Oh, Tae-Sung
- Issue Date
- Jan-2015
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Thermoelectric Device; Thin Film; Flip Chip; Co-Evaporation; Bismuth Telluride; Antimony Telluride
- Citation
- SCIENCE OF ADVANCED MATERIALS, v.7, no.1, pp.144 - 150
- Journal Title
- SCIENCE OF ADVANCED MATERIALS
- Volume
- 7
- Number
- 1
- Start Page
- 144
- End Page
- 150
- ISSN
- 1947-2935
- Abstract
- A cross-plane thermoelectric thin-film device was obtained by flip-chip bonding the top substrate, which consisted of 50 pairs of co-evaporated n-type Bi2Te3 and p-type Sb2Te3 thin-film legs, to Cu/Au bumps in the bottom substrate. The actual temperature difference Delta T-G working across the thin-film legs was estimated to be 5 times smaller than the apparent temperature difference Delta T applied across the thin-film device. The thin-film device exhibited an open-circuit voltage of 50.7 mV and a maximum output power of 2.81 mu W when an apparent temperature difference Delta T of 38.9 K was applied across the top and bottom substrates of the thin-film device.
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