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Results 1-6 of 6 (Search time: 0.003 seconds).
Line‐edge roughness from extreme ultraviolet lithography to fin‐field‐effect‐transistor: Computational study
Kim, S.-K.
Article
Issue Date
2021
Citation
Micromachines, v.12, no.12
Publisher
MDPI
Modeling and Simulation of Line Edge Roughness for EUV Resists
김상곤
Article
Issue Date
2014
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.14, no.1, pp.61 - 69
Publisher
대한전자공학회
Line-edge roughness on fin-field-effect-Transistor performance for below 10nm patterns
Kim, Sang-kon
; S.-K.
Article
Issue Date
2019
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v.10957
Publisher
SPIE
Line-Edge Roughness on Fin-Field-Effect-Transistor Performance for 7-nm and 5-nm Patterns
Kim, Sang-Kon
Article
Issue Date
2020
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.20, no.11, pp.6912 - 6915
Publisher
AMER SCIENTIFIC PUBLISHERS
Line-Edge Roughness Stochastics for 5-nm Pattern Formation in the Extreme Ultraviolet Lithography
Kim, Sang-Kon
Article
Issue Date
2019
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.19, no.8, pp.4657 - 4660
Publisher
AMER SCIENTIFIC PUBLISHERS
Effects of Line-Edge Roughness on Extreme Ultraviolet Lithography CDs and Fin-Field-Effect-Transistor Performance for Below 10-nm Patterns
Kim, Sang-Kon
Article
Issue Date
2017
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.11, pp.8338 - 8343
Publisher
AMER SCIENTIFIC PUBLISHERS
1
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Subject
EUV
5
Lithography
5
FinFET
4
Line Edge Roughness
3
Lithography Simulation
3
lithography simulation
2
SIMULATION
2
DEVICE
1
DEVICES
1
EUV mask
1
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