Probing and passivating electron traps at the MAPbI(3)/TiO2 interface
- Authors
- Park, Byoungnam
- Issue Date
- Apr-2021
- Publisher
- ELSEVIER
- Keywords
- MAPbI(3); TiO2; Charge transfer; Field-effect transistor
- Citation
- RESULTS IN PHYSICS, v.23
- Journal Title
- RESULTS IN PHYSICS
- Volume
- 23
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/16222
- DOI
- 10.1016/j.rinp.2021.104025
- ISSN
- 2211-3797
- Abstract
- We developed a test platform structure to probe interfacial charge transport/transfer at the methyl-ammonium lead iodide (MAPbI(3))/TiO2 interface, demonstrating that trap density in the MAPbI(3) close to TiO2 is far lower than that without TiO2, evidenced from the gate voltage-dependent threshold voltage difference based on field effect transistor (FET) structure. We found that the TiO2 layer plays a crucial role in electronic passivation of the SiO2 surface, while a rough surface suppresses efficient charge transport at a large area between the source and drain electrodes.
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- Appears in
Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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