Blue Inorganic Light Emitting Diode on Flexible Polyimide Substrate Using Laser Lift-Off Process
- Authors
- Barange, Nilesh; Kim, Young Dong; Ko, Hyungduk; Park, Joon-Suh; Park, Byoungnam; Ko, Doo-Hyun; Han, Il Ki
- Issue Date
- Nov-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Laser Lift Off; Inorganic Light Emitting Diode; Flexible Substrate; Blue Light Emitting Diode
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.11, pp.8237 - 8241
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 11
- Start Page
- 8237
- End Page
- 8241
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/16540
- DOI
- 10.1166/jnn.2014.9898
- ISSN
- 1533-4880
- Abstract
- The fabrication process for the blue GaN inorganic light emitting diode (ILED) on flexible polyimide (PI) substrate by laser lift off (LLO) method was demonstrated. The GaN epi-structure was grown on patterned sapphire wafer. GaN samples were temporary bonded with polyimide substrate by flexible silver epoxy. Separation of the whole GaN LED film from GaN/sapphire wafer was accomplished using a single KrF excimer (248 nm) laser pulse directed through the transparent sapphire wafer. Device fabrication was carried out on both rigid silicon and flexible polyimide substrate, and I-V performance for both devices was measured. The optimized LLO process for the whole GaN LED film transfer would be applicable in flexible LED applications without compromising electrical properties.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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