A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz
DC Field | Value | Language |
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dc.contributor.author | Lee, Min-Seong | - |
dc.contributor.author | Kim, Donghwan | - |
dc.contributor.author | Eom, Sukeun | - |
dc.contributor.author | Cha, Ho-Young | - |
dc.contributor.author | Seo, Kwang-Seok | - |
dc.date.accessioned | 2021-11-11T02:42:23Z | - |
dc.date.available | 2021-11-11T02:42:23Z | - |
dc.date.created | 2021-10-25 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/16575 | - |
dc.description.abstract | A 29.4-W X-band high-power amplifier has been substantialized using GaN on high-resistive silicon substrate. The developed GaN high electron mobility transistor (HEMT) with 3.6-mm gate periphery provides 29.4-W output power and 8-dB small signal gain at 8 GHz with power added efficiency of 39.4% under pulse condition at a duty of 10% with a pulsewidth 100 mu s. Load-pull measurement at 8 GHz demonstrates an output power density of 8.1 W/mm. To the best of our knowledge, the presented amplifier exhibits the highest power density, delivering > 10 W of output power in X-band for GaN HEMTs technology on silicon substrate. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | ELECTRON-MOBILITY TRANSISTORS | - |
dc.title | A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
dc.identifier.doi | 10.1109/LED.2014.2343233 | - |
dc.identifier.scopusid | 2-s2.0-84907658541 | - |
dc.identifier.wosid | 000343011300007 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.10, pp.995 - 997 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 35 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 995 | - |
dc.citation.endPage | 997 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY TRANSISTORS | - |
dc.subject.keywordAuthor | AlGaN/GaN-on-Si | - |
dc.subject.keywordAuthor | power density | - |
dc.subject.keywordAuthor | PAE | - |
dc.subject.keywordAuthor | X-band | - |
dc.subject.keywordAuthor | amplifier | - |
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