Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors
- Authors
- Lee, Sung Woo; Kim, Dong Wook; Shin, Hyunji; Choi, Jong Sun; Bae, Jin-Hyuk; Zhang, Xue; Park, Jaehoon
- Issue Date
- 24-Jul-2014
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- gate dielectric; Organic transistor; molecular weight; polystyrene
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.598, no.1, pp.129 - 134
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 598
- Number
- 1
- Start Page
- 129
- End Page
- 134
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/16648
- DOI
- 10.1080/15421406.2014.933384
- ISSN
- 1542-1406
- Abstract
- We report on the molecular weight effect of polystyrene (PS) gate dielectric on the characteristics of pentacene thin-film transistors. Dielectric layers were formed by using three different PS molecules of high molecular weight (PS-H) and low molecular weight (PS-L), and their blend (PS-B). The transistor having the PS-H gate dielectric exhibited the most pronounced drain currents as well as mobility. The gate-leakage current for the device with PS-H was even lower by one order of magnitude than that for the device with PS-L. The results are explained with the relationship between the surface characteristics of gate dielectric layer together with pentacene grain size and the transistor performances.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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