The Effects of Si Submounts Containing Cu Thermal Vias on the Heat-Dissipation Characteristics of a High-Power Light-Emitting Diode Package
- Authors
- Kim, M. Y.; Jeong, T.; Ha, J. S.; Oh, T. S.
- Issue Date
- Feb-2014
- Publisher
- SPRINGER
- Keywords
- High-power LED; LED package; Si submount; Cu thermal via; thermal resistance
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.43, no.2, pp.630 - 635
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 43
- Number
- 2
- Start Page
- 630
- End Page
- 635
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/16757
- DOI
- 10.1007/s11664-013-2918-z
- ISSN
- 0361-5235
- Abstract
- We investigated the effects of Si submounts containing Cu thermal vias on the heat-dissipation characteristics of a high-power light-emitting diode (LED) package. Simulations were used to determine the optimum conditions for effective heat dissipation from the LED. The optimum thickness of the Si submount containing the Cu thermal vias was 250 mu m. The optimum heat flux area ratio between the Si submount and the LED chip was 25. The thermal resistance of an Si submount 250 mu m thick and 25 mm(2) in area was 1.85 K/W without Cu vias. This value decreased to 1.50 K/W on incorporation of the 400-mu m-diameter Cu vias. In addition, the total thermal resistance of the LED package structure was improved from 9.7 K/W to 8.3 K/W on incorporation of the 400-mu m-diameter Cu vias into the Si submount.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/16757)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.