Ion activation in boron-doped polycrystalline Si thin films prepared on glass substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | So, Byoung-Soo | - |
dc.contributor.author | Park, Chan-Rok | - |
dc.contributor.author | Bae, Seung-Muk | - |
dc.contributor.author | Kim, Young-Hwan | - |
dc.contributor.author | Hwang, Jinha | - |
dc.date.accessioned | 2021-11-11T03:43:56Z | - |
dc.date.available | 2021-11-11T03:43:56Z | - |
dc.date.created | 2021-11-10 | - |
dc.date.issued | 2013-10 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17036 | - |
dc.description.abstract | Boron-implanted polycrystalline Si thin films were subjected to thermal annealing. Their evolving electrical and structural features were characterized using Hall measurements, Raman Spectroscopy, transmission electron microcopy, and UV-Visible transmittance spectrophotometry. The Raman analysis indicated that boron implantation did not induce structurally significant damage, i.e., lattice distortion. Even low-temperature annealing at 350 A degrees C provided a high degree of activation, keeping the atomic structure restored on the short-range order, as confirmed by transmission electron microscopy and optical transmittance data. At temperatures above 350 A degrees C, the charge carriers exhibited temperature-independent behaviors, with a charge carrier concentration of 6 or 7 x 10(19)/cm(3). The boron-implanted Si thin films were found to be subject to electronic stopping rather than nuclear stopping, thus allowing for low-temperature activation. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | DOPANT ACTIVATION | - |
dc.subject | SILICON | - |
dc.subject | CRYSTALLIZATION | - |
dc.subject | TRANSISTORS | - |
dc.title | Ion activation in boron-doped polycrystalline Si thin films prepared on glass substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, Jinha | - |
dc.identifier.doi | 10.3938/jkps.63.1362 | - |
dc.identifier.scopusid | 2-s2.0-84886259831 | - |
dc.identifier.wosid | 000326055400023 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.63, no.7, pp.1362 - 1367 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 63 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1362 | - |
dc.citation.endPage | 1367 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001844580 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | DOPANT ACTIVATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordAuthor | Boron implantation | - |
dc.subject.keywordAuthor | Activation | - |
dc.subject.keywordAuthor | Raman spectroscopy | - |
dc.subject.keywordAuthor | Hall measurements | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.