Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire
DC Field | Value | Language |
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dc.contributor.author | Son, Ji-Su | - |
dc.contributor.author | Miao, Cao | - |
dc.contributor.author | Honda, Yoshio | - |
dc.contributor.author | Yamaguchi, Masahito | - |
dc.contributor.author | Amano, Hiroshi | - |
dc.contributor.author | Seo, Yong Gon | - |
dc.contributor.author | Hwang, Sung-Min | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.date.accessioned | 2021-11-11T03:44:38Z | - |
dc.date.available | 2021-11-11T03:44:38Z | - |
dc.date.created | 2021-11-10 | - |
dc.date.issued | 2013-08 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17088 | - |
dc.description.abstract | We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth (ELOG) techniques. The fully coalescent a-plane GaN layer using nano-and microscale SiO2 masks showed the formation of nano- and microscale voids on the masks, respectively. Atomic force microscopy (AFM) measurements revealed a surface roughness of 0.63 nm and a submicron pit density of similar to 7.8 x 10(7) cm(-2). Photoluminescence (PL) intensity was enhanced by a factor of 9.0 in comparison with that of a planar sample. Omega full-width at half-maximum (FWHM) values of the (11 (2) over bar0) X-ray rocking curve along the c- and m-axes were 553 and 788 arcsec, respectively. A plan-view cathodoluminescence (CL) mapping image showed high luminescence intensity on the SiO2 masks. (C) 2013 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | DISLOCATION REDUCTION | - |
dc.subject | NITRIDE | - |
dc.subject | FIELDS | - |
dc.title | Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Baik, Kwang Hyeon | - |
dc.identifier.doi | 10.7567/JJAP.52.08JC04 | - |
dc.identifier.scopusid | 2-s2.0-84883173442 | - |
dc.identifier.wosid | 000323883100044 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.8 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 52 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DISLOCATION REDUCTION | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | FIELDS | - |
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