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Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymeric Gate Dielectric on a Flexible Substrate
- Authors
- Hyung, Gun Woo; Park, Jaehoon; Wang, Jian-Xun; Lee, Ho Won; Li, Zhao-Hui; Koo, Ja-Ryong; Kwon, Sang Jik; Cho, Eou-Sik; Kim, Woo Young; Kim, Young Kwan
- Issue Date
- Jul-2013
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.7
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 52
- Number
- 7
- ISSN
- 0021-4922
- Abstract
- Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a solution-processed polymeric gate dielectric of cross-linked poly(4-vinylphenol) (c-PVP) film were fabricated on a poly(ethylene terephthalate) (PET) substrate on which an a-IGZO film, as the active channel layer, was deposited by radio frequency (RF) sputtering. The entire TFT fabrication process was carried out at a temperature below 110 degrees C. The device exhibited an on/off ratio of 1.5 x 10(6) and a high field-effect mobility of 10.2 cm(2) V-1 s(-1), which is, to our knowledge, the best result ever achieved among a-IGZO TFTs with polymeric gate dielectrics on a plastic substrate. (C) 2013 The Japan Society of Applied Physics
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Related Researcher
- Kim, Young Kwan
- Engineering (Applied Science)