Nonvolatile memory device based on SiO2/GaN/AlGaN/GaN heterostructure
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, J. -G. | - |
dc.contributor.author | Choi, S. | - |
dc.contributor.author | Park, B. -R. | - |
dc.contributor.author | Seo, K. -S. | - |
dc.contributor.author | Kim, H. | - |
dc.contributor.author | Cha, H. -Y. | - |
dc.date.accessioned | 2021-11-11T04:41:49Z | - |
dc.date.available | 2021-11-11T04:41:49Z | - |
dc.date.created | 2021-11-10 | - |
dc.date.issued | 2013-04-11 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17148 | - |
dc.description.abstract | Demonstrated is a nonvolatile memory device based on a SiO2/GaN/AlGaN/GaN heterostructure in which the upper GaN layer acted as a storage node. Charges were stored in and released from the upper GaN layer by applying positive and negative gate biases, respectively. The top SiO2 layer acted as a blocking layer. The threshold voltage shift was similar to 3 V between the program and erase modes and the retention characteristics were very stable over 10000 s. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.title | Nonvolatile memory device based on SiO2/GaN/AlGaN/GaN heterostructure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, H. | - |
dc.contributor.affiliatedAuthor | Cha, H. -Y. | - |
dc.identifier.doi | 10.1049/el.2012.4083 | - |
dc.identifier.scopusid | 2-s2.0-84886743825 | - |
dc.identifier.wosid | 000321710100011 | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.49, no.8 | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 49 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
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