Capacitance-voltage analysis of LaAlO3/SrTiO3 heterostructures
DC Field | Value | Language |
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dc.contributor.author | Kim, Seong Keun | - |
dc.contributor.author | Kim, Shin-Ik | - |
dc.contributor.author | Hwang, Jin-Ha | - |
dc.contributor.author | Kim, Jin-Sang | - |
dc.contributor.author | Baek, Seung-Hyub | - |
dc.date.accessioned | 2021-11-11T04:42:01Z | - |
dc.date.available | 2021-11-11T04:42:01Z | - |
dc.date.created | 2021-11-10 | - |
dc.date.issued | 2013-03-18 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17161 | - |
dc.description.abstract | We performed capacitance-voltage analysis of 5-nm-thick LaAlO3/SrTiO3 heterostructure containing two-dimensional-electron-gas (2DEG) at the interface. The complex impedance of the heterostructure was measured as a function of frequency for a wide range of gate biases. The impedance spectra showed a different behavior above and below an applied voltage of -1.8V. The capacitance determined from the impedance was approximately 1.2 nF above -1.8V and was drastically reduced to similar to 0.01 nF below this voltage, owing to depletion of 2DEG and the insulating SrTiO3 underneath it. This suggests that devices utilizing LaAlO3/SrTiO3 can facilitate switching operations in a very small voltage range. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798334] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | ELECTRON-GAS | - |
dc.subject | HETEROINTERFACE | - |
dc.title | Capacitance-voltage analysis of LaAlO3/SrTiO3 heterostructures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, Jin-Ha | - |
dc.identifier.doi | 10.1063/1.4798334 | - |
dc.identifier.scopusid | 2-s2.0-84875717721 | - |
dc.identifier.wosid | 000316544900066 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.102, no.11 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 102 | - |
dc.citation.number | 11 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRON-GAS | - |
dc.subject.keywordPlus | HETEROINTERFACE | - |
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