Chemical bath deposition of CdS channel layer for fabrication of low temperature-processed thin-film-transistors
DC Field | Value | Language |
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dc.contributor.author | Kwon, Ji-Hye | - |
dc.contributor.author | Ahn, Joo-Seob | - |
dc.contributor.author | Yang, Heesun | - |
dc.date.accessioned | 2021-11-11T04:42:42Z | - |
dc.date.available | 2021-11-11T04:42:42Z | - |
dc.date.created | 2021-11-10 | - |
dc.date.issued | 2013-01 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17210 | - |
dc.description.abstract | similar to 66 nm thick CdS film with a hexagonal structure was uniformly generated via a low temperature-processed chemical bath deposition at 80 degrees C using a complexing agent of ethylenediaminetetraacetic acid and its crystal structure, surface morphology, optical transmittance, and Raman scattering property were measured. Grown CdS film was used as a channel layer for the fabrication of bottom-gate, top-contact thin-film-transistor (TFT). The TFT device with 60 degrees C-dried channel layer exhibited a poor electrical performance of on-to-off drain current ratio (I-on/I-off) of 5.1 x 10(3) and saturated channel mobility (mu(sat)) of 0.10 cm(2)/Vs. However, upon annealing at 350 degrees C, substantially improved electrical characteristics resulted, showing I-on/I-off of 5.9 x 10(7) and mu(sat) of 5.07 cm(2)/Vs. Furthermore, CdS channel layer was chemically deposited in an identical way on a transparent substrate of SiNx/ITO/glass as part of transparent TFT fabrication, resulting in I-on/I-off of 5.8 x 10(7) and mu(sat) of 2.50 cm(2)/Vs. (C) 2012 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | CADMIUM-SULFIDE | - |
dc.title | Chemical bath deposition of CdS channel layer for fabrication of low temperature-processed thin-film-transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yang, Heesun | - |
dc.identifier.doi | 10.1016/j.cap.2012.06.016 | - |
dc.identifier.scopusid | 2-s2.0-84866114812 | - |
dc.identifier.wosid | 000308716900015 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.13, no.1, pp.84 - 89 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 84 | - |
dc.citation.endPage | 89 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001756572 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CADMIUM-SULFIDE | - |
dc.subject.keywordAuthor | CdS | - |
dc.subject.keywordAuthor | Chemical bath deposition | - |
dc.subject.keywordAuthor | Complexing agent | - |
dc.subject.keywordAuthor | Thin-film-transistor | - |
dc.subject.keywordAuthor | Channel mobility | - |
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