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The Effect of Rapid Temperature Annealing with N-2 and H-2 on Photoelectrochemical Properties of u-TiO2
- Authors
- Bae, Hyojung; Park, Seung Hwan; Nakamura, Akihiro; Koike, Kayo; Fujii, Katsushi; Park, Hyung-Jo; Lee, Hyo-Jong; Oh, Tae-Sung; Ha, Jun-Seok
- Issue Date
- 2013
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.160, no.11, pp.H800 - H802
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 160
- Number
- 11
- Start Page
- H800
- End Page
- H802
- ISSN
- 0013-4651
- Abstract
- The effects of annealing with H-2 and N-2 on the photoelectrochemical (PEC) properties of annealed Nb-doped TiO2 (ann-TNO) film were investigated. The photocurrent density of the ann-TNO film was 2 to 3 orders of magnitude higher than that of u-TiO2 film To understand this phenomenon, ann-TNO film was investigated by comparing u-TiO2 and Nb-doped TiO2 (TNO) films. An investigation was conducted using Hall effect estimation, photoluminescence (PL) analysis, and band-gap calculation. (C) 2013 The Electrochemical Society. All rights reserved.
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