Deposition Optimization and Property Characterization of Copper-Oxide Thin Films Prepared by Reactive Sputtering
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 유일환 | - |
dc.contributor.author | 배승묵 | - |
dc.contributor.author | 김영환 | - |
dc.contributor.author | 황진하 | - |
dc.date.accessioned | 2021-11-11T06:43:59Z | - |
dc.date.available | 2021-11-11T06:43:59Z | - |
dc.date.created | 2021-11-10 | - |
dc.date.issued | 2013 | - |
dc.identifier.issn | 1226-9360 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17960 | - |
dc.description.abstract | Copper-oxide (CuO) thin films were prepared by reactive sputtering of Cu onto Si wafers and characterized using a statistical design of experiments approach. The most significant factor in controlling the electrical resistivity and deposition rate was determined to be the O2 fraction. The deposited CuO thin films were characterized in terms of their physical and chemical properties, using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Xray diffraction (XRD), and 4-point resistance measurements. The deposited copper thin films were characterized by XPS and XRD analyses to consist of Cu2+. The CuO thin films of highest resistivity exhibited superior rectifying responses with regard to n-type Si wafers, with a current ratio of 3.8×103. These superior responses are believed to be associated with the formation of a charge-depletion region originating from the p-type CuO and n-type Si materials. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 한국마이크로전자및패키징학회 | - |
dc.title | Deposition Optimization and Property Characterization of Copper-Oxide Thin Films Prepared by Reactive Sputtering | - |
dc.title.alternative | Deposition Optimization and Property Characterization of Copper-Oxide Thin Films Prepared by Reactive Sputtering | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 김영환 | - |
dc.contributor.affiliatedAuthor | 황진하 | - |
dc.identifier.doi | 10.6117/kmeps.2013.20.1.027 | - |
dc.identifier.bibliographicCitation | 마이크로전자 및 패키징학회지, v.20, no.1, pp.27 - 31 | - |
dc.relation.isPartOf | 마이크로전자 및 패키징학회지 | - |
dc.citation.title | 마이크로전자 및 패키징학회지 | - |
dc.citation.volume | 20 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 27 | - |
dc.citation.endPage | 31 | - |
dc.type.rims | ART | - |
dc.identifier.kciid | ART001758767 | - |
dc.description.journalClass | 2 | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | CuO thin films | - |
dc.subject.keywordAuthor | Nonohmic Responses | - |
dc.subject.keywordAuthor | Diode | - |
dc.subject.keywordAuthor | n-Type Si | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.