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Recessed AlGaN/GaN UV Phototransistor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jang, Won-Ho | - |
| dc.contributor.author | Kim, Hyun-Seop | - |
| dc.contributor.author | Kang, Myoung-Jin | - |
| dc.contributor.author | Cho, Chun-Hyung | - |
| dc.contributor.author | Cha, Ho-Young | - |
| dc.date.available | 2020-07-10T03:37:29Z | - |
| dc.date.created | 2020-07-06 | - |
| dc.date.issued | 2019-04 | - |
| dc.identifier.issn | 1598-1657 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/1813 | - |
| dc.description.abstract | We developed an AlGaN/GaN heterojunction phototransistor with a recessed detection area to enhance the photoresponsivity. The recessed-AlGaN/GaN phototransistor exhibited a maximum photoresponsivity of 1.6 x 10(7) A/W at 375 nm, which was similar to 30% higher than that obtained with a conventional AlGaN/GaN phototransistor. A comparable photoresponsivity was also achieved at 260 nm in UV-C range due to the dual absorption process in conjunction with the polarization induced built-in electric field characteristics of AlGaN/GaN heterojunction. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEK PUBLICATION CENTER | - |
| dc.subject | PHOTODETECTORS | - |
| dc.title | Recessed AlGaN/GaN UV Phototransistor | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Cho, Chun-Hyung | - |
| dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
| dc.identifier.doi | 10.5573/JSTS.2019.19.2.184 | - |
| dc.identifier.scopusid | 2-s2.0-85066981111 | - |
| dc.identifier.wosid | 000465573000007 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.19, no.2, pp.184 - 189 | - |
| dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
| dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
| dc.citation.volume | 19 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 184 | - |
| dc.citation.endPage | 189 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART002459018 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | PHOTODETECTORS | - |
| dc.subject.keywordAuthor | AlGaN/GaN heterojunction | - |
| dc.subject.keywordAuthor | photo-transistor | - |
| dc.subject.keywordAuthor | ultraviolet (UV) | - |
| dc.subject.keywordAuthor | photoresponsivity | - |
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Related Researcher
- Cho, Chun Hyung
- Science & Technology (Department of Electronic & Electrical Convergence Engineering)