Organic field-effect transistors with surface modification by using a PVK buffer layer on flexible substrates
- Authors
- Hyung, Gun Woo; Lee, Dong Hyung; Koo, Ja-Ryong; Kim, Young Kwan; Park, Jaehoon
- Issue Date
- Nov-2012
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Thin-film transistors; Pentacene; Gate dielectric; Surface free energy
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.10, pp.1720 - 1723
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 61
- Number
- 10
- Start Page
- 1720
- End Page
- 1723
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/18868
- DOI
- 10.3938/jkps.61.1720
- ISSN
- 0374-4884
- Abstract
- We have fabricated pentacene thin-film transistors (TFTs) with a gate dielectric such as cross-linked poly(vinyl alcohol) (c-PVA), with poly(9-vinylcarbazole) (PVK) buffer layer on a polyether-sulfone (PES) flexible substrate, and with substrate heating at a temperature below 120 A degrees C, and we demonstrated the possibility of using an organic gate dielectric layer as a potential pentacene TFT with a PVK buffer layer for low-voltage operation on a plastic substrate. We report the excellent electrical properties of organic TFTs with a PVK buffer layer. The PVK buffer layer improves the performance of the devices and reduces the operating voltage of the devices. Our pentacene TFTs can be fabricated with mobilities > 2.54 cm(2)/Vs and on/off current ratios > 7.5E5 and with flexible organic dielectrics and substrates.
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Collections - College of Engineering > Department of Science > 1. Journal Articles
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