Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range
DC Field | Value | Language |
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dc.contributor.author | Kim, Yongsik | - |
dc.contributor.author | Bae, Minkyung | - |
dc.contributor.author | Kim, Woojoon | - |
dc.contributor.author | Kong, Dongsik | - |
dc.contributor.author | Jeong, Hyun Kwang | - |
dc.contributor.author | Kim, Hyungtak | - |
dc.contributor.author | Choi, Sunwoong | - |
dc.contributor.author | Kim, Dong Myong | - |
dc.contributor.author | Kim, Dae Hwan | - |
dc.date.accessioned | 2021-12-02T04:41:53Z | - |
dc.date.available | 2021-12-02T04:41:53Z | - |
dc.date.created | 2021-11-29 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/18889 | - |
dc.description.abstract | A combination of the multifrequency C-V and the generation-recombination current spectroscopy is proposed for a complete extraction of density of states (DOS) in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) over the full subband-gap energy range (E-V <= E <= E-C) including the interface trap density between the gate oxide and the a-IGZO active layer. In particular, our result on the separate extraction of acceptor- and donor-like DOS is noticeable for a systematic design of amorphous oxide semiconductor TFTs because the former determines their dc characteristics and the latter does their threshold voltage (V-T) instability under practical operation conditions. The proposed approach can be used to optimize the fabrication process of thin-film materials with high mobility and stability for mass-production-level amorphous oxide semiconductor TFTs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | OXIDE SEMICONDUCTOR A-INGAZNO4-X | - |
dc.subject | ELECTRONIC-STRUCTURE | - |
dc.subject | INSTABILITY | - |
dc.subject | TRANSPORT | - |
dc.subject | ORIGINS | - |
dc.subject | VOLTAGE | - |
dc.subject | LIGHT | - |
dc.title | Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Hyungtak | - |
dc.identifier.doi | 10.1109/TED.2012.2208969 | - |
dc.identifier.scopusid | 2-s2.0-84866737871 | - |
dc.identifier.wosid | 000309132200018 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.10, pp.2689 - 2698 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 59 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 2689 | - |
dc.citation.endPage | 2698 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTOR A-INGAZNO4-X | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | INSTABILITY | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | ORIGINS | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | LIGHT | - |
dc.subject.keywordAuthor | Amorphous InGaZnO (a-IGZO) | - |
dc.subject.keywordAuthor | density of states (DOS) | - |
dc.subject.keywordAuthor | full subband gap | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
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