Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment
DC Field | Value | Language |
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dc.contributor.author | Chung, G. H. | - |
dc.contributor.author | Vuong, T. A. | - |
dc.contributor.author | Kim, H. | - |
dc.date.available | 2020-07-10T03:37:58Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.issn | 2211-3797 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/1889 | - |
dc.description.abstract | Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT type gas sensors were fabricated on AlGaN/GaN-on-Si platform and the gate area was functionalized with platinum (Pt) as a floating electrode for hydrogen sensing. AlGaN/GaN HEMTs maintained stable current-voltage (I-V) characteristics up to 350 degrees C before and after they were exposed to proton-irradiation with a total dose of 10(15)/cm (2) at 5 MeV. Pt-functionalized GaN HEMT sensors demonstrated excellent hydrogen-sensing performance in the temperature range of 200-350 degrees C. The sensors were able to operate with 30% of hydrogen sensitivity at 350 degrees C even after proton irradiation. This result suggests that gas sensors based-on AlGaN/GaN HEMT structure should be a strong candidate for harsh environment electronics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | DIODES | - |
dc.title | Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, H. | - |
dc.identifier.doi | 10.1016/j.rinp.2018.11.064 | - |
dc.identifier.scopusid | 2-s2.0-85057138870 | - |
dc.identifier.wosid | 000460704700013 | - |
dc.identifier.bibliographicCitation | RESULTS IN PHYSICS, v.12, pp.83 - 84 | - |
dc.relation.isPartOf | RESULTS IN PHYSICS | - |
dc.citation.title | RESULTS IN PHYSICS | - |
dc.citation.volume | 12 | - |
dc.citation.startPage | 83 | - |
dc.citation.endPage | 84 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | Hydrogen sensing | - |
dc.subject.keywordAuthor | HEMT | - |
dc.subject.keywordAuthor | High temperature | - |
dc.subject.keywordAuthor | Radiation hardness | - |
dc.subject.keywordAuthor | Extreme environment | - |
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