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Effect of Organic Buffer Layer in the Electrical Properties of Amorphous-Indium Gallium Zinc Oxide Thin Film Transistor
- Authors
- Wang, Jian-Xun; Hyung, Gun Woo; Li, Zhao-Hui; Son, Sung-Yong; Kwon, Sang Jik; Kim, Young Kwan; Cho, Eou Sik
- Issue Date
- Jul-2012
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Thin-Film Transistors; Amorphous-Indium Gallium Zinc Oxide; Gate Dielectric; Organic Buffer Layer
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5644 - 5647
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 12
- Number
- 7
- Start Page
- 5644
- End Page
- 5647
- ISSN
- 1533-4880
- Abstract
- In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electrical properties of devices. By inserting an organic buffer layer, it was possible to make an affirmation of the improvements in the electrical characteristics of a-IGZO TFTs such as subthreshold slope (SS), on/off current ratio (l(ON/OFF)) off-state current, and saturation field-effect mobility (mu(FE)). The a-IGZO TFTs with the cross-linked polyvinyl, alcohol (c-PVA) buffer layer exhibited the pronounced improvements of the mu(FE) (17.4 cm(2)Ns), SS (0.9 V/decade), and l(ON/OFF) (8.9x 10(6)).
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Related Researcher
- Kim, Young Kwan
- Engineering (Applied Science)