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ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate
- Authors
- Hyung, Gun Woo; Park, Jaehoon; Koo, Ja Ryong; Choi, Kyung Min; Kwon, Sang Jik; Cho, Eou Sik; Kim, Yong Seog; Kim, Young Kwan
- Issue Date
- Mar-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Zinc oxide; Thin-film transistor; Atomic layer deposition (ALD); Plastic substrate; Polymeric insulator
- Citation
- SOLID-STATE ELECTRONICS, v.69, pp.27 - 30
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 69
- Start Page
- 27
- End Page
- 30
- ISSN
- 0038-1101
- Abstract
- Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm(2)/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator. (c) 2011 Elsevier Ltd. All rights reserved.
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Related Researcher
- Kim, Young Kwan
- Engineering (Applied Science)