Breakdown voltage enhancement in field plated AlGaN/GaN-on-Si HFETs using mesa-first prepassivation process
DC Field | Value | Language |
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dc.contributor.author | Park, B. -R. | - |
dc.contributor.author | Lee, J. -G. | - |
dc.contributor.author | Lee, H. -J. | - |
dc.contributor.author | Lim, J. | - |
dc.contributor.author | Seo, K. -S. | - |
dc.contributor.author | Cha, H. -Y. | - |
dc.date.accessioned | 2021-12-02T04:44:15Z | - |
dc.date.available | 2021-12-02T04:44:15Z | - |
dc.date.created | 2021-11-29 | - |
dc.date.issued | 2012-02-02 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19021 | - |
dc.description.abstract | It has been found that the field plate metal in direct contact with the mesa sidewall in a conventional prepassivation process is responsible for the early breakdown phenomenon in field plated AlGaN/GaN-on-Si heterojunction field-effect transistors (HFETs). The breakdown voltage characteristics of the field plated AlGaN/GaN-on-Si HFETs fabricated using two different prepassivation processes were investigated as a function of field plate length. The breakdown voltages were significantly enhanced by employing the mesa-first prepassivation process in which the field plate was separated from the mesa edge by the passivation layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.subject | GANHEMTS | - |
dc.title | Breakdown voltage enhancement in field plated AlGaN/GaN-on-Si HFETs using mesa-first prepassivation process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, H. -Y. | - |
dc.identifier.doi | 10.1049/el.2011.3778 | - |
dc.identifier.scopusid | 2-s2.0-84861634212 | - |
dc.identifier.wosid | 000300405400030 | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.48, no.3, pp.166 - U66 | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 48 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 166 | - |
dc.citation.endPage | U66 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | GANHEMTS | - |
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