Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J.H. | - |
dc.contributor.author | Hwang, S.-M. | - |
dc.contributor.author | Seo, Y.G. | - |
dc.contributor.author | Kim, D.S. | - |
dc.contributor.author | Baik, K.H. | - |
dc.contributor.author | Park, J.H. | - |
dc.date.accessioned | 2021-12-02T04:45:20Z | - |
dc.date.available | 2021-12-02T04:45:20Z | - |
dc.date.created | 2021-11-30 | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 0277-786X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19095 | - |
dc.description.abstract | We investigated the effects of SiNx interlayers on the structural and electrical properties of nonpolar a-plane (11-20) GaN grown on r-plane (1-102) sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The Nomarski optical microscope images showed that the deposition conditions of the SiNx layer could strongly affect the aplane GaN surface morphology due to the different SiNx coverage. Basal-plane stacking faults (BSFs) and threading dislocation (TD) densities were reduced in the a-plane GaN samples with high SiNx coverage and multiple SiNx-treated GaN interlayers. These results indicate that TD reduction is associated with an increase in the 3D growth step and with the blocking of TD propagation. From on-axis (11-20) X-ray rocking curve (XRC) measurements, the anisotropy of full width at half maximum (FWHM) can be attributed to the crystal mosaicity due to insertion of different SiNx interlayers. The anisotropy of sheet resistance between the c-and m-axis was also clearly seen in a-plane GaN samples with a high density of defects, which was attributed to the BSFs as scattering centers. © 2012 SPIE. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPIE-INT SOC OPTICAL ENGINEERING | - |
dc.title | Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Baik, K.H. | - |
dc.identifier.doi | 10.1117/12.929523 | - |
dc.identifier.scopusid | 2-s2.0-84872191655 | - |
dc.identifier.wosid | 000312163300006 | - |
dc.identifier.bibliographicCitation | Proceedings of SPIE - The International Society for Optical Engineering, v.8484 | - |
dc.relation.isPartOf | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.title | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.volume | 8484 | - |
dc.type.rims | ART | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordAuthor | A-plane gan | - |
dc.subject.keywordAuthor | Metal-organic chemical vapor deposition | - |
dc.subject.keywordAuthor | Nitrides | - |
dc.subject.keywordAuthor | Nonpolar | - |
dc.subject.keywordAuthor | Transfer length method | - |
dc.subject.keywordAuthor | Transmission electron microscopy | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.