Efficiency enhancement of the organic light-emitting diodes by oxygen plasma treatment of the ITO substrate
DC Field | Value | Language |
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dc.contributor.author | Hong, J.W. | - |
dc.contributor.author | Oh, D.H. | - |
dc.contributor.author | Kim, C.H. | - |
dc.contributor.author | Kim, G.Y. | - |
dc.contributor.author | Kim, T.W. | - |
dc.date.accessioned | 2021-12-02T04:45:30Z | - |
dc.date.available | 2021-12-02T04:45:30Z | - |
dc.date.created | 2021-11-30 | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 1229-9162 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19106 | - |
dc.description.abstract | Oxygen plasma has been treated on the surface of indium-tin-oxide (ITO) to improve the efficiency of the organic light-emitting diodes (OLEDs) device. The plasma treatment was expected to inject the holes effectively due to the control of an ITO work-function and the reduction of surface roughness. To optimize the treatment condition, a surface resistance and morphology of the ITO surface were investigated. The effect on the electrical properties of the OLEDs was evaluated as a function of oxygen plasma powers (0, 200, 250, 300, and 450 W). The electrical properties of the devices were measured in a device structure of ITO/TPD/Alq3/BCP/LiF/Al. It was found the plasma treatment of the ITO surface affects on the efficiency of the device. The efficiency of the device was optimized at the plasma power of 250 W and decreased at higher power than 250 W. The maximum values of luminance, luminous power efficiency, and external quantum efficiency of the plasma treated devices increase by 1. 4 times, 1. 4 times, and 1. 2 times, respectively, compared to those of the non-treated ones. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.title | Efficiency enhancement of the organic light-emitting diodes by oxygen plasma treatment of the ITO substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, T.W. | - |
dc.identifier.scopusid | 2-s2.0-84874197675 | - |
dc.identifier.bibliographicCitation | Journal of Ceramic Processing Research, v.13, no.SPL. ISS.2, pp.s193 - s197 | - |
dc.relation.isPartOf | Journal of Ceramic Processing Research | - |
dc.citation.title | Journal of Ceramic Processing Research | - |
dc.citation.volume | 13 | - |
dc.citation.number | SPL. ISS.2 | - |
dc.citation.startPage | s193 | - |
dc.citation.endPage | s197 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | External quantum efficiency | - |
dc.subject.keywordAuthor | Luminous power efficiency | - |
dc.subject.keywordAuthor | Plasma treatment | - |
dc.subject.keywordAuthor | Surface resistance | - |
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