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Improved conduction in GaN Schottky junctions HfO2 passivation layers through post-deposition annelaing
- Authors
- 김광은
- Issue Date
- 14-Feb-2019
- Publisher
- IOP Publishing LTD
- Citation
- Japanese Journal of Applied Physics, v.59, no.3, pp.030902 - 030902
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 59
- Number
- 3
- Start Page
- 030902
- End Page
- 030902
- ISSN
- 0021-4922
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Related Researcher
- Kim, Kwang eun
- Science & Technology (전자전기융합공학과)