Effects of electrochemical parameters on electrochemical silicon etching in porous silicon layer transfer process

Abstract

A porous silicon (PS) layer transfer process that monocrystalline silicon film grown on a silicon substrate wafer is separated with the substrate and transferred to a non-silicon device enable to get monocrystalline Silicon film on low-cost substrates such as glass. In layer transfer process, porous silicon layer has a double structure with different porosity. Porous silicon is fabricated by electrochemical etching in a fluoric acid solution. The porosity of the porous layer can be controlled by the formation parameters such as current density and fluoric acid concentration. In this research, the effects of electrochemical parameters variation on porous silicon layer are investigated. Ultrasonic baths are used to accelerate the diffusion of dissolved species and hydrogen gas from the surface of porous silicon.