Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications
DC Field | Value | Language |
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dc.contributor.author | Lee, Jae-Gil | - |
dc.contributor.author | Lee, Ho-Jung | - |
dc.contributor.author | Cha, Ho-Young | - |
dc.contributor.author | Lee, Minseong | - |
dc.contributor.author | Ryoo, Yeonmi | - |
dc.contributor.author | Seo, Kwang-Seok | - |
dc.contributor.author | Mun, Jae-Kyoung | - |
dc.date.accessioned | 2021-12-15T02:42:01Z | - |
dc.date.available | 2021-12-15T02:42:01Z | - |
dc.date.created | 2021-12-10 | - |
dc.date.issued | 2011-09 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19816 | - |
dc.description.abstract | In this study, we fabricated AlGaN/CaN-on-Si high electron mobility transistors (HEMTs) for high voltage switching applications where both the field plate length and the gate-to-drain distance were varied for structural optimization. A tapered gate was fabricated in conjunction with the field plate in order to effectively suppress the high electric field at the gate edge. Regardless of the gate-to-drain distance, which was varied from 7 to 20 mu m, the highest breakdown voltage was obtained with a short field plate length (i.e., 2 3 mu m), and the breakdown voltage monotonically decreased with increasing field plate length. A breakdown voltage of 1200 V with an on-resistance of 3.7 m Omega.cm(2) was achieved using a gate-to-drain distance of 20 mu m and a field plate length of 3 mu m. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | SCHOTTKY CONTACTS | - |
dc.subject | METAL | - |
dc.title | Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
dc.identifier.doi | 10.3938/jkps.59.2297 | - |
dc.identifier.scopusid | 2-s2.0-80052900484 | - |
dc.identifier.wosid | 000294971600022 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.3, pp.2297 - 2300 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 59 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 2297 | - |
dc.citation.endPage | 2300 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001586598 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | SCHOTTKY CONTACTS | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordAuthor | AlGaN/GaN-on-Si HEMT | - |
dc.subject.keywordAuthor | Breakdown voltage | - |
dc.subject.keywordAuthor | Field plate | - |
dc.subject.keywordAuthor | Post-annealing | - |
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