Metal-Induced Crystallization of Amorphous Si Thin Films Assisted by Atomic Layer Deposition of Nickel Oxide Layers
DC Field | Value | Language |
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dc.contributor.author | So, Byung-Soo | - |
dc.contributor.author | Bae, Seung-Muk | - |
dc.contributor.author | You, Yil-Hwan | - |
dc.contributor.author | Jo, DaiHui | - |
dc.contributor.author | Lee, Sun Sook | - |
dc.contributor.author | Chung, Taek-Mo | - |
dc.contributor.author | Kim, Chang Gyoun | - |
dc.contributor.author | An, Ki-Seok | - |
dc.contributor.author | Hwang, Jin-Ha | - |
dc.date.accessioned | 2021-12-15T02:42:27Z | - |
dc.date.available | 2021-12-15T02:42:27Z | - |
dc.date.created | 2021-12-10 | - |
dc.date.issued | 2011-08 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19841 | - |
dc.description.abstract | Atomic layer deposition (ALD) of nickel oxide was applied to the nickel-induced crystallization of amorphous Si thin films. The nickel-induced crystallization was monitored as a function of annealing temperature and time using Raman spectroscopy. Since Raman spectroscopy allows for the numerical quantification of structural components, the incubation time and the crystallization rates were estimated as functions of the annealing temperature. The spatial locations of a nickel-based species, probably NiSi(2), were investigated using X-ray photoelectron spectrometry. The formed NiSi(2) seeds appeared to accelerate the crystallization kinetics in amorphous Si thin films deposited onto glass substrates. The ramifications of the atomic layer deposition are discussed with regard to large-panel displays, with special emphasis on the sophisticated control of the catalytic elements, especially nickel. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | SILICON FILMS | - |
dc.title | Metal-Induced Crystallization of Amorphous Si Thin Films Assisted by Atomic Layer Deposition of Nickel Oxide Layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, Jin-Ha | - |
dc.identifier.doi | 10.1166/jnn.2011.4832 | - |
dc.identifier.scopusid | 2-s2.0-84863051920 | - |
dc.identifier.wosid | 000295296400081 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.8, pp.7137 - 7140 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 7137 | - |
dc.citation.endPage | 7140 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SILICON FILMS | - |
dc.subject.keywordAuthor | Nickel-Induced Crystallization | - |
dc.subject.keywordAuthor | Nickel Oxides | - |
dc.subject.keywordAuthor | Raman Spectroscopy | - |
dc.subject.keywordAuthor | Catalytic Elements | - |
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