In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process
- Authors
- Kim, Dong-Hyun; Hong, Won-Eui; Ro, Jae-Sang; Lee, Seong Hyuk; Lee, Chang-Hoon; Park, Seungho
- Issue Date
- 1-Jun-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Joule-heating induced crystallization; In-situ measurements; Phase transformation; Amorphous silicon; Polycrystalline silicon
- Citation
- THIN SOLID FILMS, v.519, no.16, pp.5516 - 5522
- Journal Title
- THIN SOLID FILMS
- Volume
- 519
- Number
- 16
- Start Page
- 5516
- End Page
- 5522
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19867
- DOI
- 10.1016/j.tsf.2011.03.053
- ISSN
- 0040-6090
- Abstract
- During the Joule-heating induced crystallization (JIC) process of amorphous silicon for display applications, its phase transformation from amorphous to polycrystalline phases occurs through two different kinetic paths of either solid-to-solid or solid-to-liquid-to-solid phases. Depending on input conditions such as power density and pulsing time, each path results in nano-crystalline silicon phases or large grain structures produced by lateral growth, respectively. In this study, the phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. The temperature field estimated from a simple conduction model confirms the phase-transformation behavior observed experimentally. In addition we could obtain the poly-Si structure produced by solid phase crystallization having the process time of 250 As and reaching the highest temperature around 1350 K. (C) 2011 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > Department of Mechanical and System Design Engineering > 1. Journal Articles
- College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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