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Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jae-Gil | - |
| dc.contributor.author | Cho, Chun-Hyung | - |
| dc.contributor.author | Cha, Ho-Young | - |
| dc.date.accessioned | 2021-12-15T02:43:31Z | - |
| dc.date.available | 2021-12-15T02:43:31Z | - |
| dc.date.created | 2021-12-10 | - |
| dc.date.issued | 2011-05 | - |
| dc.identifier.issn | 0916-8524 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19902 | - |
| dc.description.abstract | We investigated the effects of various field plate and buried gate structures on the DC and small signal characteristics of 4H-silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs). In comparison with the source-connected field plate, the gate-connected field plate exhibited superior frequency response while having similar DC characteristics. In order to further enhance the output power, dual field plates were employed in conjunction with a buried gate structure. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
| dc.subject | SIC MESFETS | - |
| dc.subject | POWER | - |
| dc.subject | FABRICATION | - |
| dc.title | Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Cho, Chun-Hyung | - |
| dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
| dc.identifier.doi | 10.1587/transele.E94.C.842 | - |
| dc.identifier.scopusid | 2-s2.0-79955590359 | - |
| dc.identifier.wosid | 000292618900030 | - |
| dc.identifier.bibliographicCitation | IEICE TRANSACTIONS ON ELECTRONICS, v.E94C, no.5, pp.842 - 845 | - |
| dc.relation.isPartOf | IEICE TRANSACTIONS ON ELECTRONICS | - |
| dc.citation.title | IEICE TRANSACTIONS ON ELECTRONICS | - |
| dc.citation.volume | E94C | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 842 | - |
| dc.citation.endPage | 845 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | SIC MESFETS | - |
| dc.subject.keywordPlus | POWER | - |
| dc.subject.keywordPlus | FABRICATION | - |
| dc.subject.keywordAuthor | buried gate | - |
| dc.subject.keywordAuthor | field plate | - |
| dc.subject.keywordAuthor | MESFET | - |
| dc.subject.keywordAuthor | silicon carbide | - |
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)