Thermal Activation in Ion-shower-doped Poly-Si
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Won-Eui | - |
dc.contributor.author | Ro, Jae-Sang | - |
dc.date.accessioned | 2021-12-15T02:44:14Z | - |
dc.date.available | 2021-12-15T02:44:14Z | - |
dc.date.created | 2021-12-10 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19948 | - |
dc.description.abstract | The activation behavior of implanted atoms was investigated in P+/B+ ion-shower-doped poly-Si upon thermal annealing. Phosphorous or boron was implanted by ion shower doping at acceleration voltages from 2 kV to 15 kV by using a source gas mixture of PH3/H-2 or B9H6/H-2. Isochronal annealing was conducted using a tube furnace at temperatures ranging from 400 degrees C to 600 degrees C for 30 min. With some exceptions the sheet resistance decreased as the acceleration voltage increased upon annealing. Reverse annealing, in which the loss of charge carriers continues, was observed to start at around 400 degrees C in the case of B-doping. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | POLYCRYSTALLINE SILICON | - |
dc.subject | BORON | - |
dc.title | Thermal Activation in Ion-shower-doped Poly-Si | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ro, Jae-Sang | - |
dc.identifier.doi | 10.3938/jkps.58.321 | - |
dc.identifier.scopusid | 2-s2.0-79951638835 | - |
dc.identifier.wosid | 000287426100027 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.2, pp.321 - 325 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 58 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 321 | - |
dc.citation.endPage | 325 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001526124 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | BORON | - |
dc.subject.keywordAuthor | Low temperature poly-Si | - |
dc.subject.keywordAuthor | Ion shower doping | - |
dc.subject.keywordAuthor | Dopant activation | - |
dc.subject.keywordAuthor | Reverse annealing | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.