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Thermal Activation in Ion-shower-doped Poly-Si
- Authors
- Hong, Won-Eui; Ro, Jae-Sang
- Issue Date
- Feb-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Low temperature poly-Si; Ion shower doping; Dopant activation; Reverse annealing
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.2, pp.321 - 325
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 58
- Number
- 2
- Start Page
- 321
- End Page
- 325
- ISSN
- 0374-4884
- Abstract
- The activation behavior of implanted atoms was investigated in P+/B+ ion-shower-doped poly-Si upon thermal annealing. Phosphorous or boron was implanted by ion shower doping at acceleration voltages from 2 kV to 15 kV by using a source gas mixture of PH3/H-2 or B9H6/H-2. Isochronal annealing was conducted using a tube furnace at temperatures ranging from 400 degrees C to 600 degrees C for 30 min. With some exceptions the sheet resistance decreased as the acceleration voltage increased upon annealing. Reverse annealing, in which the loss of charge carriers continues, was observed to start at around 400 degrees C in the case of B-doping.
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