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Investigation in the Ga2O3 passivation layer formed as GaN Schottky barrier through UV/O3 treatment
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김광은 | - |
| dc.date.available | 2020-07-10T04:02:12Z | - |
| dc.date.created | 2020-07-08 | - |
| dc.date.issued | 2019-01-23 | - |
| dc.identifier.issn | 2211-3797 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/2014 | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | Elsevier Science BV | - |
| dc.title | Investigation in the Ga2O3 passivation layer formed as GaN Schottky barrier through UV/O3 treatment | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | 김광은 | - |
| dc.identifier.bibliographicCitation | Results in Physics, v.16, no.-, pp.102964 - 102964 | - |
| dc.relation.isPartOf | Results in Physics | - |
| dc.citation.title | Results in Physics | - |
| dc.citation.volume | 16 | - |
| dc.citation.number | - | - |
| dc.citation.startPage | 102964 | - |
| dc.citation.endPage | 102964 | - |
| dc.type.rims | ART | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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