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Investigation in the Ga2O3 passivation layer formed as GaN Schottky barrier through UV/O3 treatment
- Authors
- 김광은
- Issue Date
- 23-Jan-2019
- Publisher
- Elsevier Science BV
- Citation
- Results in Physics, v.16, no.-, pp.102964 - 102964
- Journal Title
- Results in Physics
- Volume
- 16
- Number
- -
- Start Page
- 102964
- End Page
- 102964
- ISSN
- 2211-3797
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Related Researcher
- Kim, Kwang eun
- Science & Technology (전자전기융합공학과)