Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Improvement of device performance by co-doping of an emitting dopant with hole- and electron-transport materials
- Authors
- Park, N.R.; Ryu, G.Y.; Lim, D.H.; Lee, S.J.; Kim, Y.K.; Shin, D.M.
- Issue Date
- 2011
- Keywords
- BDAT-P; Co-doping; Green emission; Organic light-emitting diodes
- Citation
- Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, v.2, pp.72 - 75
- Journal Title
- Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
- Volume
- 2
- Start Page
- 72
- End Page
- 75
- ISSN
- 0000-0000
- Abstract
- We demonstrated that the efficiency of green organic light-emitting diodes (OLEDs) was improved by co-doping with hole transport material, N′-bis-(1-naphyl)-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPB) and electron transport material, bis(2-methyl-8- quninolinato)-4-phenylphenolate aluminum (BAlq), into emitting layer. Co-doping with NPB and BAlq can improve charge balance which makes it possible to enhance device efficiency. The maximum luminous and quantum efficiency of BDAT-P doped device was measured to be 5.56 cd/A and 1.99%, respectively. Device co-doped with NPB, BAlq and BDAT-P resulted in the most efficient device, in which maximum luminous and quantum efficiency were 8.36 cd/A and 3.19%, respectively.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Young Kwan
- Engineering (Applied Science)