Colloidal ZnO quantum dot-based, solution-processed transparent field-effect transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Joo-Seob | - |
dc.contributor.author | Lee, Jong-Jin | - |
dc.contributor.author | Hyung, Gun Woo | - |
dc.contributor.author | Kim, Young Kwan | - |
dc.contributor.author | Yang, Heesun | - |
dc.date.accessioned | 2021-12-17T01:42:38Z | - |
dc.date.available | 2021-12-17T01:42:38Z | - |
dc.date.created | 2021-12-16 | - |
dc.date.issued | 2010-07-14 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20746 | - |
dc.description.abstract | ZnO-based transistors were solution-processed using similar to 3.6 nm sized ZnO quantum dots (QDs). Spin-deposited ZnO QD layer was annealed to remove QD capping organic molecules and to increase the connectivity of adjacent QDs. The resulting QD layer was highly transparent and crack free without any noticeable pores. 600 degrees C annealing of QD channel layer resulted in the highest electrical performances of bottom-gate QD-based transistors. A small quantity of Sn doping into the QD channel layer was found to be effective in further improving the electrical characteristics of the QD-based transistor, in particular exhibiting a higher field-effect mobility (0.282 cm(2) V(-1) s(-1)) by more than 4 factors than that of an undoped QD-based one. Finally, a fully transparent Sn-doped QD-based device was demonstrated by sputter deposition of Ga-doped ZnO as source-drain transparent electrodes and its electrical properties were evaluated. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | ZINC-OXIDE NANOPARTICLES | - |
dc.subject | NANOWIRE TRANSISTORS | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | MOBILITY | - |
dc.subject | SEMICONDUCTOR | - |
dc.subject | CHANNEL | - |
dc.subject | FABRICATION | - |
dc.subject | NANORODS | - |
dc.title | Colloidal ZnO quantum dot-based, solution-processed transparent field-effect transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Young Kwan | - |
dc.contributor.affiliatedAuthor | Yang, Heesun | - |
dc.identifier.doi | 10.1088/0022-3727/43/27/275102 | - |
dc.identifier.scopusid | 2-s2.0-77953910062 | - |
dc.identifier.wosid | 000279003700009 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.43, no.27 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 43 | - |
dc.citation.number | 27 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ZINC-OXIDE NANOPARTICLES | - |
dc.subject.keywordPlus | NANOWIRE TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | NANORODS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.