Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads
DC Field | Value | Language |
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dc.contributor.author | Seo, Seung Gi | - |
dc.contributor.author | Han, Sang-Woo | - |
dc.contributor.author | Cha, Ho-Young | - |
dc.contributor.author | Yang, Sunggu | - |
dc.contributor.author | Jin, Sung Hun | - |
dc.date.available | 2020-07-10T04:02:35Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2019-01 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/2080 | - |
dc.description.abstract | Herein, GaN driver FETs with a high-energy bandgap are employed in photosensitive inverters to eliminate light-shield layers (LSLs). This configuration exhibits the full-swing characteristics of photosensitive inverters comprised of multi-layered MoS2 FET loads in the photo-sensitive pseudo-depletion mode. The GaN FETs provide both high current drivability and excellent photo-leakage immunity under visible light. This allows the photosensitive inverters to be successfully operational without LSLs. The relative degradation (%) of voltage gain for photosensitive inverters with GaN drivers from dark to blue light exposure is improved from 67.7% to 53.0%, as compared to previously reported MoS2 inverters with LSLs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | INTERNET | - |
dc.subject | THINGS | - |
dc.subject | CIRCUITS | - |
dc.subject | READOUT | - |
dc.title | Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
dc.identifier.doi | 10.1109/LED.2018.2879908 | - |
dc.identifier.scopusid | 2-s2.0-85056324492 | - |
dc.identifier.wosid | 000456172600027 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.40, no.1, pp.107 - 110 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 40 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 107 | - |
dc.citation.endPage | 110 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | INTERNET | - |
dc.subject.keywordPlus | THINGS | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | READOUT | - |
dc.subject.keywordAuthor | Photosensitive inverters | - |
dc.subject.keywordAuthor | MoS2 FETs | - |
dc.subject.keywordAuthor | low noise margin | - |
dc.subject.keywordAuthor | GaN FETs | - |
dc.subject.keywordAuthor | light-shield layers (LSLs) | - |
dc.subject.keywordAuthor | biosensors | - |
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