Preparation of Aluminum Oxide Layer for Gate Insulator Application in Organic Thin-Film Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jong Won | - |
dc.contributor.author | Park, Jaehoon | - |
dc.contributor.author | Kim, Dong Wook | - |
dc.contributor.author | Noh, Jung Chul | - |
dc.contributor.author | Choi, Jong Sun | - |
dc.date.accessioned | 2021-12-17T04:42:47Z | - |
dc.date.available | 2021-12-17T04:42:47Z | - |
dc.date.created | 2021-12-16 | - |
dc.date.issued | 2010 | - |
dc.identifier.issn | 1542-1406 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/21687 | - |
dc.description.abstract | The characteristics of organic thin-films transistors (OTFTs) with the anodized aluminum oxide insulator have been investigated. The OTFT with the barrier-type aluminum oxide insulator exhibited the mobility of 0.09 cm(2)/Vs, the subthreshold slope of 1.3V/decade, the threshold voltage of -2.2 V, and the on/off ratio of 7.7 x 10(4), which are superior to those for the device with the porous-type insulator. The smooth surface of the barrier-type film is found to contribute to a long range hopping of charge carriers in the conducting channel by decreasing the activation energy for the conduction of charge carriers. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.title | Preparation of Aluminum Oxide Layer for Gate Insulator Application in Organic Thin-Film Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong Sun | - |
dc.identifier.doi | 10.1080/15421401003594479 | - |
dc.identifier.scopusid | 2-s2.0-77951456070 | - |
dc.identifier.wosid | 000277664700027 | - |
dc.identifier.bibliographicCitation | MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.519, pp.187 - 191 | - |
dc.relation.isPartOf | MOLECULAR CRYSTALS AND LIQUID CRYSTALS | - |
dc.citation.title | MOLECULAR CRYSTALS AND LIQUID CRYSTALS | - |
dc.citation.volume | 519 | - |
dc.citation.startPage | 187 | - |
dc.citation.endPage | 191 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordAuthor | Anodizing aluminum oxide | - |
dc.subject.keywordAuthor | gate insulator | - |
dc.subject.keywordAuthor | organic thin-film transistor | - |
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