Preparation of Aluminum Oxide Layer for Gate Insulator Application in Organic Thin-Film Transistors
- Authors
- Lee, Jong Won; Park, Jaehoon; Kim, Dong Wook; Noh, Jung Chul; Choi, Jong Sun
- Issue Date
- 2010
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- Anodizing aluminum oxide; gate insulator; organic thin-film transistor
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.519, pp.187 - 191
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 519
- Start Page
- 187
- End Page
- 191
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/21687
- DOI
- 10.1080/15421401003594479
- ISSN
- 1542-1406
- Abstract
- The characteristics of organic thin-films transistors (OTFTs) with the anodized aluminum oxide insulator have been investigated. The OTFT with the barrier-type aluminum oxide insulator exhibited the mobility of 0.09 cm(2)/Vs, the subthreshold slope of 1.3V/decade, the threshold voltage of -2.2 V, and the on/off ratio of 7.7 x 10(4), which are superior to those for the device with the porous-type insulator. The smooth surface of the barrier-type film is found to contribute to a long range hopping of charge carriers in the conducting channel by decreasing the activation energy for the conduction of charge carriers.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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