Study on the Charge Injection Barrier in Solution-Processed 6,13-bis(triisopropylsilylethynyl) Pentacene Based Schottky Diodes

Abstract

We report on the interfacial characteristics between solution-processed 6,13- bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and gold electrodes through controlling the device annealing temperature (DAT) in the schottky diodes. The interfacial characteristics were quantitatively investigated by the height of charge injection barrier from the gold electrode into the TIPS-pentacene layer using Fowler-Nordheim theory. The barrier height was found to be monotonically increased with increasing the DAT. This implies that the contact resistance between the metal electrode and the solution-processed organic semiconductor layer can be definitely increased with a process temperature when such interface is applied to the organic electronic devices.