Effects of Moisture on Pentacene Field-Effect Transistors with Polyvinylpyrrolidone Gate Insulator
- Authors
- Park, Jaehoon; Lee, Sin-Doo; Park, Bong June; Choi, Hyoung Jin; Kim, Dong Wook; Choi, Jong Sun
- Issue Date
- 2010
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- Field-effect transistor; moisture; pentacene; stability
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.531, pp.14 - 20
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 531
- Start Page
- 14
- End Page
- 20
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/21710
- DOI
- 10.1080/15421406.2010.495928
- ISSN
- 1542-1406
- Abstract
- We report the effects of moisture on the electrical characteristics of pentacene field-effect transistors (FETs) with the polyvinylpyrrolidone (PVPy) gate insulator. For the condition of relative humidity below 40%, the pentacene FET exhibited a stable operation without a shift in the threshold voltage upon a gate voltage sweep direction. With increasing the relative humidity above 50%, the threshold voltage shifted critically toward the positive direction, accompanied by significant degradations in the field-effect mobility and the subthreshold slope. These moisture-induced characteristic degradations could be substantially recovered by the low-temperature annealing process under a base pressure of 2 x 10(-3) Torr.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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