Nonvolatile Memory Effects of NiO Layers Embedded in Al2O3 High-k Dielectrics Using Atomic Layer Deposition
- Authors
- Cho, Wontae; Lee, Sun Sook; Chung, Taek-Mo; Kim, Chang Gyoun; An, Ki-Seok; Ahn, Jae-Pyoung; Lee, Jun-Young; Lee, Jong-Won; Hwang, Jin-Ha
- Issue Date
- 2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.6, pp.II209 - II212
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 13
- Number
- 6
- Start Page
- II209
- End Page
- II212
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/21730
- DOI
- 10.1149/1.3380827
- ISSN
- 1099-0062
- Abstract
- Nonvolatile memory effects of Al2O3/NiO/Al2O3 nanolaminates deposited through atomic layer deposition were investigated. The memory structure was constructed without interruption in the order of Al2O3/NiO/Al2O3 thin-film deposition on Si wafers. The memory characteristics were analyzed through high frequency capacitance-voltage measurement along with high resolution images of the aforementioned nanolaminates. The defective nature of nickel oxide produces a significantly large memory window; the largest memory window observed was 13.8 V. The peculiar memory characteristics were understood in terms of the constituent tunnel and charge-trapping layers in the metal gate/high-k oxide/semiconducting oxide/high-k oxide/Si memory structures. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3380827] All rights reserved.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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