Analysis of the relative intensity noise characteristics of the strained AlGaInN LDs under high frequency modulation

Abstract

The relative intensity noise (RIN) characteristics in blue laser diodes on wurtzite AlGaInN MQW structures were investigated using the rate equations with the quantum Langevin noise model. The device parameters were extracted from the band structures of the MQW active region by using the self-consistent multiband Hamiltonian for the strained wurtzite crystal structure. This method has been applied to the strained MQW LDs for various conditions including the external feedback and the high frequency current injection. © 2009 Optical Society of America.